Study of trapping phenomenon in 4H-SiC MESFETs: Dependence on substrate purity

IEEE Transactions on Electron Devices

Volumn 50, Issue 2, 2003, Pages 297-302

  Sghaier, Nabil ^a   Bluet, Jean Marie ^a   Souifi, Abdelkader ^a   Guillot, Gérard ^a   Morvan, Erwan ^b   Brylinski, Christian ^b  

^a UNIVERSITÉ DE LYON   (France)

^b Thales TRT   (France)

Author keywords

HTCVD; MESFETs; Trapping

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRON TRAPS; SILICON CARBIDE; SUBSTRATES; THERMAL CONDUCTIVITY;

PHYSICAL VAPOR TRANSPORT (PVT);

MESFET DEVICES;

EID: 0037502773     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.808559     Document Type: Article

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