Compression of the dc drain current by electron trapping in AlGaN/GaN modulation doped field-effect transistors

Applied Physics Letters

Volumn 78, Issue 19, 2001, Pages 2896-2898

  Nozaki, S ^a,c   Feick, H ^a   Weber, E R ^a   Micovic, M ^b   Nguyen, C ^b  

^a University of California Berkeley   (United States)

^b Hughes Aircraft Co   (United States)

^c UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035820962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1367274     Document Type: Article

References (13)

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