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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 2 A, 2006, Pages 680-684

AlGaAs/InGaAs/GaAs transistor-based hydrogen sensing device grown by metal organic chemical vapor deposition

(7) Hung, Ching Wen a Lin, Han Lien a Tsai, Yan Ying a Lai, Po Hsien a Fu, Ssu I a Chen, Huey Ing a Liu, Wen Chau a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

Hydrogen sensor; Pd; PHEMT; Sensitivity; Transient response

Indexed keywords

GALLIUM COMPOUNDS; HYDROGEN; INDIUM COMPOUNDS; SEMICONDUCTING ALUMINUM COMPOUNDS;

HYDROGEN SENSOR; PHEMT; TRANSIENT RESPONSE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION;

EID: 32244444701 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.45.680 Document Type: Article

Times cited : (14)

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