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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1545-1547

Bias-tunable multiple-transconductance with improved transport characteristics of δ-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/G aAs high electron mobility transistor using a graded superlattice spacer

(2) Lee, Ching Sung b Hsu, Wei Chou a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b CHIENKUO TECHNOLOGY UNIVERSITY (Taiwan)

Author keywords

Bias tunable multiple transconductance; HEMT; Mobility improvement; Real space transfer; Superlattice spacer

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES; STRAIN; SURFACE ROUGHNESS; TRANSCONDUCTANCE;

BIAS TUNABLE MULTIPLE TRANSCONDUCTANCE; GRADED SUPERLATTICE SPACER; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038608214 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.42.1545 Document Type: Article

Times cited : (1)

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