Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes

IEEE Transactions on Electron Devices

Volumn 50, Issue 12, 2003, Pages 2532-2539

  Tsai, Yan Ying ^a   Lin, Kun Wei ^b   Lu, Chun Tsen ^a   Chen, Huey Ing ^a   Chuang, Hung Ming ^a   Chen, Chun Yuan ^a   Cheng, Chin Chuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

Barrier height; Fermi level pinning; Hydrogen sensors; Schottky diode

Indexed keywords

ADSORPTION; CHEMICAL SENSORS; CURRENT VOLTAGE CHARACTERISTICS; HIGH TEMPERATURE EFFECTS; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROWAVE DEVICES; OPTOELECTRONIC DEVICES; PALLADIUM; SEMICONDUCTING ALUMINUM COMPOUNDS;

BARRIER HEIGHT; ENERGY BANDGAPS; FERMI-LEVEL PINNING; HYDROGEN-SENSING PROPERTIES;

SCHOTTKY BARRIER DIODES;

EID: 1642421927     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.819656     Document Type: Article

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