Study of hydrogen-sensing characteristics of a Pt-oxide-AlGaAs metal-oxide-semiconductor high electron mobility transistor

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 5, 2005, Pages 1943-1947

  Cheng, Chin Chuan ^a   Tsai, Yan Ying ^a   Lin, Kun Wei ^b   Chen, Huey Ing ^a   Hsu, Wei Hsi ^a   Hong, Ching Wen ^a   Lin, Han Lien ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CATALYSIS; DESORPTION; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROGEN; PLATINUM; SEMICONDUCTING ALUMINUM COMPOUNDS; THRESHOLD VOLTAGE;

HYDROGEN-SENSING PROPERTIES; TRANSIENT RESPONSE;

MOS DEVICES;

EID: 31144445473     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2013314     Document Type: Article

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