High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 816-821

  Li, A Z ^a   Chen, Y Q ^a   Chen, J X ^a   Qi, M ^a   Liu, X C ^b   Chen, J ^b   Wang, R M ^b   Wang, W L ^b   Li, W X ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

A1. Characterization; A3. Molecular beam epitaxy; B1. Phosphides; B3. High electron mobility devices

Indexed keywords

COMPOSITION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THRESHOLD VOLTAGE;

LOW-NOISE AMPLIFIER (LNA);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037380707     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02508-3     Document Type: Conference Paper

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