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Volumn 36, Issue 1-3, 1996, Pages 285-289

The capacitively controlled field effect transistor (CCFET) as a new low power gas sensor

Author keywords

CMOS technology; Field effect transistor; Gas sensor; Low power application

Indexed keywords

AMMONIA; CAPACITORS; CARBON INORGANIC COMPOUNDS; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; HYDROGEN; PALLADIUM;

EID: 0030257721     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(97)80083-4     Document Type: Article
Times cited : (45)

References (9)
  • 3
    • 0027578168 scopus 로고
    • Simulation of the lateral electrical field for the analysis of the threshold voltage instabilities of suspended gate field effect transistors
    • Z. Gergintschew, D. Schipanski, P. Kornetzky, I. Eisele and B. Flietner, Simulation of the lateral electrical field for the analysis of the threshold voltage instabilities of suspended gate field effect transistors, Sensors and Actuators B, 12 (1993) 231-235.
    • (1993) Sensors and Actuators B , vol.12 , pp. 231-235
    • Gergintschew, Z.1    Schipanski, D.2    Kornetzky, P.3    Eisele, I.4    Flietner, B.5
  • 4
    • 30244487560 scopus 로고    scopus 로고
    • Thesis, Unversität der Bundeswehr, München
    • Th. Doll, Thesis, Unversität der Bundeswehr, München, 1996.
    • (1996)
    • Doll, Th.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.