High performance 0.1 μm GaAs pseudomorphic hIgh electron mobility transistors with Si pulse-doped cap layer for 77 GHz car radar applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2472-2475

  Kim, Sungwon ^a   Noh, Hunhee ^a   Jang, Kyoungchul ^a   Lee, JaeHak ^b   Seo, Kwangseok ^a  

^a Seoul National University   (South Korea)

^b 4F Emerald Building   (South Korea)

Author keywords

fT; GaAs; Ohmic contact; PHEMT; Si pulse doped; Transconductance

Indexed keywords

CURRENT DENSITY; MICROWAVES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; OHMIC CONTACTS; RADAR; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

CUT-OFF FREQUENCY, FT; GATE CURRENT DENSITY; PSEUDOMORPHIC HIGH ELECTRON TRANSISTORS (PHEMT); SI PULSE-DOPED;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 21244467132     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.2472     Document Type: Conference Paper

References (8)

1. H. Wang, Y. Hwang, T. H. Chen, M. Biedenbender, D. C. Streit, D. C. W. Lo, G. S. Dow and B. R. Allen: IEEE MTT-S Int. Microwave Symp. Dig. 2 (1995) 419.
2. M. Aust, H. Wang, M. Biedenbender, R. Lai, D. C. Streit, P. H. Liu, G. S. Dow and B. R. Allen: IEEE Microwave Guided Wave Lett. 5 (1995) 12.
3. H. Y. Chang, Huei Wang, Michael Yu and Younghui Shu: IEEE Microwave and Wireless Components Lett. 12 (2003) 143.
4. S. Makioka, Y. Anda, K. Miyatsuji and D. Ueda: IEEE Trans. Electron Devices 48 (2001) 1510.
5. G. Y. Robinson: Physics and Chemistry of III-V Compound Semiconductor Interfaces, ed. C. W. Wilmsen (1985) p. 73.
6. A. S. Wakita, C.-Y. Su, H. Rondin, H.-Y. Liu, A. Lee, J. Seeger and V. M. Robbins: J. Vac. Sci. & Technol. B 13 (1995) 2725.
7. S. Yasin, Shazia Yasin, D. G. Hasko and H. Ahmed: J. Vac. Sci. & Technol. B 17 (1999) 3390.
8. X. Hue, X. Hue, B. Boudart and Y. Crosnier: J. Vac. Sci. & Technol. B 16 (1998) 2675.