Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer

Journal of Crystal Growth

Volumn 231, Issue 4, 2001, Pages 520-524

  Cao, Xin ^a   Zeng, Yiping ^a   Kong, Meiying ^a   Pan, Liang ^a   Wang, Baoqiang ^a   Zhu, Zhanping ^a   Wang, Xiaoguang ^b   Chang, Yong ^b   Chu, Junhao ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. High electron mobility transistors

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

SPACER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035502169     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01529-9     Document Type: Article

References (12)

1. Presented at the Eleventh International Conference on Molecular Beam Epitaxy, Beijing, China