Hydrogen sensing characteristics of Pd-and Pt-Al0.3Ga 0.7As metal-semiconductor (MS) Schottky diodes

Semiconductor Science and Technology

Volumn 19, Issue 6, 2004, Pages 778-782

  Cheng, Chin Chuan ^a   Tsai, Yan Ying ^a   Lin, Kun Wei ^a,b   Chen, Huey Ing ^a   Hsu, Wei Hsi ^a   Chuang, Huns Ming ^a   Chen, Chun Yuan ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHIENKUO TECHNOLOGY UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CATALYSTS; ENTHALPY; EPITAXIAL GROWTH; EVAPORATION; HYDROGEN; ISOTHERMS; LEAKAGE CURRENTS; OHMIC CONTACTS; PHOTOLITHOGRAPHY; PLATINUM COMPOUNDS; SEMICONDUCTOR METAL BOUNDARIES;

BUFFER LAYERS; HYDROGEN DETECTION SENSITIVITY; HYDROGEN DISSOCIATION;

SCHOTTKY BARRIER DIODES;

EID: 2942533041     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/6/022     Document Type: Article

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