Dual-gate In0.5Ga0.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors with high linearity and variable gate-voltage swing

Semiconductor Science and Technology

Volumn 16, Issue 10, 2001, Pages 826-830

  Lour, W S ^a   Tsai, M K ^b   Chen, K C ^a   Wu, Y W ^a   Tan, S W ^a   Yang, Y J ^b  

^a NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

GATES (TRANSISTOR);

EID: 0035481052     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/10/303     Document Type: Article

References (5)

1. Band offsets at the GaInP/GaAs heterojunction
2. High-gain, low-offset-voltage and zero potential spike by InGaP/GaAs δ-doped single heterojunction bipolar transistor (δ-SHBT)
3. 0.85As pseudomorphic transistors
4. Improved breakdown in LP-MOCVD grown n-GaAs/δ(P)-GaInP/n-GaAs heterojunction camel-gate FET
5. 0.49P airbridge gate structure grown by GSMBE