Growth optimization of InGaP layers by solid source molecular beam epitaxy for the application of InGaP/In0.2Ga0.8As/GaAs high electron mobility transistor structures

Journal of Crystal Growth

Volumn 216, Issue 1, 2000, Pages 51-56

  Zheng, H Q ^a   Yoon, S F ^a   Gay, B P ^a   Mah, K W ^a   Radhakrishnan, K ^a   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GAS; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

INDIUM GALLIUM PHOSPHIDE; SOLID SOURCE MOLECULAR BEAM EPITAXY (SSMBE);

SEMICONDUCTING FILMS;

EID: 0033702849     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00389-4     Document Type: Article

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