Comprehensive study of adsorption kinetics for hydrogen sensing with an electroless-plated Pd-InP Schottky diode

Sensors and Actuators, B: Chemical

Volumn 92, Issue 1-2, 2003, Pages 6-16

  Chen, Huey Ing ^a   Chou, Yen I ^a   Hsiung, Chieh Kang ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Adsorption kinetics; Electroless plating; Hydrogen sensing; Pd InPA; Schottky diode

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; ELECTROLESS PLATING; ENTHALPY; ENTROPY; HYDROGEN; SCHOTTKY BARRIER DIODES;

SEMICONDUCTOR SUBSTRATES;

REACTION KINETICS;

EID: 0037911450     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-4005(03)00125-4     Document Type: Article

References (32)

1. Steele M.C., Hile J.W., Maclver B.A. Hydrogen-sensitive palladium gate MOS capacitors. J. Appl. Phys. 47(6):1976;2537-2538.
2. Fang Y.K., Hwang S.B., Lin C.Y., Lee C.C. Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor. Appl. Phys. Lett. 57:1990;2686-2688.
3. Lechuga L.M., Calle A., Golmayo D., Briones F. Different catalytic metals (Pt, Pd, and Ir) for GaAs Schottky barrier sensors. Sens. Actuators B. 7:1992;614-618.
4. Luther B.P., Wolter S.D., Mohney S.E. High temperature Pt Schottky diode gas sensors on n-type GaN. Sens. Actuators B. 56:1999;164-168.
5. Kim C.K., Lee J.H., Lee Y.H., Cho N.I., Kim D.J. A study on a platinum-silicon carbide Schottky diode as a hydrogen gas sensor. Sens. Actuators B. 66:2000;116-118.
6. Cheng S.Y. A hydrogen sensitive Pd/GaAs Schottky diode sensor. Mater. Chem. Phys. 78:2002;525-528.
7. Petersson L.G., Dannetun H.M., Fogelberg J., Lundström I. Hydrogen adsorption states at the external and internal palladium surfaces of a palladium-silicon dioxide-silicon structure. J. Appl. Phys. 58(1):1985;404-413.
8. Spetz A., Armgarth M., Lundström I. Hydrogen and ammonia response of metal-silicon structures with thin platinum gates. J. Appl. Phys. 64(3):1988;1274-1283.
9. Lundström I. Hydrogen sensitive MOS-structures. Part 1. Principles and applications. Sens. Actuators. 1:1981;403-426.
10. Lundström I. Hydrogen sensitive MOS-structures. Part 2. Characterization. Sens. Actuators. 2:1981/1982;105-138.
11. Petersson L.G., Dannetun H.M., Lundström I. Water production on palladium in hydrogen-oxygen atmospheres. Surf. Sci. 163:1985;273-284.
12. Petersson L.G., Dannetun H.M., Lundström I. The water-forming reaction on palladium. Surf. Sci. 161:1985;77-100.
13. 2 reaction on palladium studied over a large pressure range: independence of the microscopic sticking coefficients on surface condition. Surf. Sci. 152/153:1985;559-568.
14. 2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device. Surf. Sci. 350:1996;91-102.
15. Löfdahl M., Eriksson M., Johansson M., Lundström I. Difference in hydrogen sensitivity between Pt and Pd field-effect devices. J. Appl. Phys. 91(7):2002;4275-4280.
16. Polishchuk V., Souteyrand E., Martin J.R., Strikha V.I., Skryshevsky V.A. A study of hydrogen detection with palladium modified porous silicon. Anal. Chim. Acta. 375:1998;205-210.
17. Johansson M., Lundström I., Ekedahl L.G. Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments. J. Appl. Phys. 84(1):1998;44-51.
18. 2 interfaces. J. Appl. Phys. 82(6):1997;3143-3146.
19. 2 interface and simulation of the response of a Pd metal-oxide-semiconductor hydrogen sensor. J. Appl. Phys. 83(8):1998;3947-3951.
20. G.A. Somorjai, Principles of Surface Chemistry, Prentice-Hall, Englewood Cliffs, NJ, 1972.
21. Kang W.P., Gurbuz Y. Comparison and analysis of Pd- and Pt-GaAs Schottky diodes for hydrogen detection. J. Appl. Phys. 75:1994;8175-8181.
22. Liu W.C., Pan H.J., Chen H.I., Lin K.W., Cheng S.Y., Yu K.H. Hydrogen-sensitive characteristics of a novel Pd/InP MOS Schottky diode hydrogen sensor. IEEE Trans. Electr. Dev. 48(9):2001;1938-1944.
23. Liu W.C., Pan H.J., Chen H.I., Lin K.W., Wang C.K. Comparative hydrogen sensing study of Pd/GaAs and Pd/InP metal-oxide-semiconductor Schottky diodes. Jpn. J. Appl. Phys. 40:2001;6254-6259.
24. Chen H.I., Chou Y.I., Chu C.Y. A novel high-sensitive Pd/InP hydrogen sensor fabricated by electroless plating. Sens. Actuators B. 85:2002;10-18.
25. Ruths P., Ashok S., Fonash S., Ruths J. A study of Pd/Si MIS Schottky barrier diode hydrogen detector. IEEE Trans. Electr. Dev. ED-28:1981;1003-1009.
26. W.C. Liu, H.I. Chen, H.J. Pan, Hydrogen sensor, US Patent. 6,293,137 B1 (2001).
27. H.I. Chen, Y.I. Chou, C.K. Hsiung, Study on hydrogen detection by Schottky diode sensors, in: Proceedings of the Electrochemical Society - The 200th Meeting of the Electrochemical Society and the 52nd Meeting of the International Society of Electrochemistry, vol. 18, San Francisco, CA, 2001, pp. 630-638.
28. D.A. Neamen, Semiconductor Physics and Devices, Irwin, Boston, 1997.
29. Eftekhari G. Variation in the effective Richardson constant of metal-GaAs and metal-InP contacts due to the effect of processing parameters. Phys. Stat. Sol. (a). 140:1993;194-198.
30. Hasegawa H., Ohno H. Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces. J. Vac. Sci. Technol. B. 4:1986;1130-1138.
31. Hara S. The Schottky limit and a charge neutrality level found on metal/6H-SiC interfaces. Surf. Sci. 494:2001;L805-L810.
32. R.J. Silbey, R.A. Alberty, Physical Chemistry, 3rd ed., Wiley, New York, 2001.