Mobility and charge density tuning in double-doped enhancement-mode pseudomorphic high-electron-mobility transistors grown by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 5909-5912

  Lee, Chong Yi ^a   Shiao, Hung Pin ^b   Kuo, Kuan Chu ^c   Wu, Hsin Yen ^c   Lin, Wen Hsiang ^c  

^a I SHOU UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

Charge density; Enhancement; Mobility; MOCVD; PHEMT

Indexed keywords

DOPING (ADDITIVES); ELECTRON MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; TRANSISTORS; X RAY DIFFRACTION ANALYSIS;

CHARGE DENSITY; ENHANCEMENT; PHEMT;

CARRIER CONCENTRATION;

EID: 31544448576     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5909     Document Type: Article

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