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MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

High-temperature reliability of GaN electronic devices

(2) Yoshida, Seikoh a Suzuki, Joe a

a FURUKAWA ELECTRIC CO LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRODES; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT RESISTIVITY; ELECTRONIC DEVICES; HIGH TEMPERATURE RELIABILITY;

MESFET DEVICES;

EID: 3242783312 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s109257830000452x Document Type: Conference Paper

Times cited : (2)

References (15)

1
- 0028485013
- T. P. Chow and R. Tyagi, IEEE Trans. Electron Devices 41, 1481 (1994).
- (1994) IEEE Trans. Electron Devices , vol.41 , pp. 1481
- Chow, T.P.¹ Tyagi, R.²

2
- 21544461610
- H. Morkoc, S. Strites, G. B. Gao, M. E. Lin, B. Sverdlov and M. Burns, J. Appl. Phys. 76, 1363 (1994).
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Strites, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

3
- 21544457041
- S. C. Binari, B. L. Rowland, W. Kruppa, G. Keiner, K. Doverspike, and D. K. Gaskill, Electron. 30, 1248 (1994).
- (1994) Electron. , vol.30 , pp. 1248
- Binari, S.C.¹ Rowland, B.L.² Kruppa, W.³ Keiner, G.⁴ Doverspike, K.⁵ Gaskill, D.K.⁶

4
- 36449006910
- M. A. Khan, M. S. Shur, J. N. Kuzunia, Q. Chin, J. Burm and W. Schaff, Appl. Phys. 66, 1083 (1995).
- (1995) Appl. Phys. , vol.66 , pp. 1083
- Khan, M.A.¹ Shur, M.S.² Kuzunia, J.N.³ Chin, Q.⁴ Burm, J.⁵ Schaff, W.⁶

5
- 0029634689
- A. Ozgur, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov and H. Morko , Electron. 31, 1389 (1995).
- (1995) Electron. , vol.31 , pp. 1389
- Ozgur, A.¹ Kim, W.² Fan, Z.³ Botchkarev, A.⁴ Salvador, A.⁵ Mohammad, S.N.⁶ Sverdlov, B.⁷ Morko, H.⁸

6
- 3242764889
- O. Akutas, Z. F. Fan, S. N. Mohammad, A. E. Botchkarev and H. Morko , Appl. Phys. 69, 3872 (1996).
- (1996) Appl. Phys. , vol.69 , pp. 3872
- Akutas, O.¹ Fan, Z.F.² Mohammad, S.N.³ Botchkarev, A.E.⁴ Morko, H.⁵

7
- 0005915772
- S. C. Binari, K. Doverspike, G. Keiner, H. B. Dietrich and A. E. Wickenden, Solid State Electron. 41, 97 (1997).
- (1997) Solid State Electron. , vol.41 , pp. 97
- Binari, S.C.¹ Doverspike, K.² Keiner, G.³ Dietrich, H.B.⁴ Wickenden, A.E.⁵

8
- 0006152606
- S. Yoshida, J. Appl. Phys. 81, 1673 (1997).
- (1997) J. Appl. Phys. , vol.81 , pp. 1673
- Yoshida, S.¹

9
- 0031269774
- S. Yoshida, J. Cryst. Growth, 181, 293 (1997).
- (1997) J. Cryst. Growth , vol.181 , pp. 293
- Yoshida, S.¹

10
- 0032074038
- S. Yoshida and J. Suzuki, Jpn. J. Appl. Phys. 37, L482 (1998).
- (1998) Jpn. J. Appl. Phys. , vol.37
- Yoshida, S.¹ Suzuki, J.²

11
- 0001285050
- S. Yoshida and J. Suzuki, J. Appl. Phys. 84, 2940 (1998).
- (1998) J. Appl. Phys. , vol.84 , pp. 2940
- Yoshida, S.¹ Suzuki, J.²

12
- 0005062516
- J. Pankov, S. S. Chang, H. C. Lee, R. J. Molnar, T. D. Moustakas and B. Van Zeghbroeck, IEDM Tech. Dig., 389 (1994).
- (1994) IEDM Tech. Dig. , pp. 389
- Pankov, J.¹ Chang, S.S.² Lee, H.C.³ Molnar, R.J.⁴ Moustakas, T.D.⁵ Van Zeghbroeck, B.⁶

13
- 0032672027
- L. S. Mc Carthy, P. Kozodoy, M. J. W. Rodwell, S. P. Denbaars and U. K. Mishra, IEEE Electron Device. Lett. 20, 277 (1998).
- (1998) IEEE Electron Device. Lett. , vol.20 , pp. 277
- Mc Carthy, L.S.¹ Kozodoy, P.² Rodwell, M.J.W.³ Denbaars, S.P.⁴ Mishra, U.K.⁵

14
- 0032620512
- S. Yoshida and J. Suzuki, J.Appl. Phys. 85, 7931 (1999).
- (1999) J. Appl. Phys. , vol.85 , pp. 7931
- Yoshida, S.¹ Suzuki, J.²

15
- 0033171966
- S. Yoshida and J. Suzuki, Jpn. J. Appl. Phys. 38, L851 (1999).
- (1999) Jpn. J. Appl. Phys. , vol.38
- Yoshida, S.¹ Suzuki, J.²

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