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MRS Internet Journal of Nitride Semiconductor Research

Volumn 3, Issue , 1998, Pages

Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111)

(10) Sanchez F J a Calle, F a Sanchez Garcia, M A a Calleja, E a Munoz E a Molloy, C H b Somerford, D J b Koschnick, F K c Michael, K c Spaeth, J M c

a Ciudad Universitaria s/n (Spain)

b UNIVERSITY OF WALES (United Kingdom)

c UNIVERSITY OF PADERBORN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BANDGAP ENERGY; IONIZATION ENERGY; PHOTOMULTIPLIER; SECONDARY ION MASS SPECTROSCOPY (SIMS);

LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; PERTURBATION TECHNIQUES; PHOTOLUMINESCENCE; SILICON; THERMAL EFFECTS;

GALLIUM NITRIDE;

EID: 4043114825 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

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