Analysis of power dissipation and high temperature operation in 4H-SiC Bipolar Junction Transistors with 4.9 MW/cm2 power density handling ability

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1121-1124

  Perez Wurfl I ^a   Torvik, J ^a   Van Zeghbroeck, B ^a  

^a PowerSicel Inc   (United States)

Author keywords

High current; High power; High temperature operation; SiC bipolar transistors; Thermal model

Indexed keywords

BIPOLAR TRANSISTORS; CURRENT VOLTAGE CHARACTERISTICS; ENERGY DISSIPATION; HEAT CONDUCTION; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

HIGH CURRENT; HIGH POWER; HIGH TEMPERATURE OPERATION; SIC BIPOLAR TRANSISTORS; THERMAL MODEL;

SILICON CARBIDE;

EID: 8744287675     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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