Measurements and simulations of self-heating and switching with 4H-SIC power BJTs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 375-378

  Domeij, M ^a   Danielsson, E ^a   Liu, W ^a   Zimmermann, U ^a   Zetterling, C M ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRON MOBILITY; SILICON CARBIDE;

INDUCTIVE LOAD SWITCHING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0041429610     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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4. W. J. Schaeffer et. Al., Mat. Res. Soc. Symp. Proc. vol. 339, p. 595 (1994)
5. E. A. Burgermeister et. al., Journal of Applied Physics, vol. 50, p. 5790 (1979)
6. U. Zimmermann et. al., Materials Science Forum, Vols. 338-342 p. 1323 (2000)