Development methodology for high-κ gate dielectrics on III-V semiconductors: Ga2O3 template on GaAs

Proceedings - Electrochemical Society

Volumn PV 2005-01, Issue , 2005, Pages 417-433

  Passlack, Matthias ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS;

BANDGAP SEMICONDUCTORS; GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 31844448124     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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