Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process

Applied Physics Letters

Volumn 72, Issue 24, 1998, Pages 3163-3165

  Passlack, M ^a   Droopad, R ^a   Yu, Z ^a   Overgaard, C ^a   Bowers, B ^a   Abrokwah, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0010641437     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121580     Document Type: Article

References (6)

1. S. P. Kowalczyk, D. L. Miller, J. R. Waldrop, P. G. Newman, and R. W. Grant, J. Vac. Sci. Technol. 19, 255 (1981).
2. Y. Fan, I. Karpov, G. Bratina, L. Sorba, W. Gladfelter, and A. Franciosi, J. Vac. Sci. Technol. B 14, 623 (1996).
3. M. Passlack, M. Hong, E. F. Schubert, G. J. Zydzik, J. P. Mannaerts, W. S. Hobson, and T. D. Harris, J. Appl. Phys. 81, 7647 (1997).
4. For an introduction to recombination processes see, e.g., R. K. Ahrenkiel and M. S. Lundstrom, Minority Carriers in III-V Semiconductors: Physics and Applications (Academic, Boston, 1993).
5. See, for example, A. S. Grove, Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
6. O. Brandt, H. Yang, and K. H. Ploog, Phys. Rev. B 54, R5215 (1996).