DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga2O3(Gd2O3) gate dielectric layer

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 139-142

  Yang, B ^a   Ye, P D ^a   Kwo, J ^a   Frei, M R ^a   Gossmann, H J L ^a   Mannaerts, J P ^a   Sergent, M ^a   Hong, M ^a   Ng, K K ^a   Bude, J ^a  

^a AGERE SYSTEMS   (United States)

Author keywords

Ga2O3(Gd2O3) gate dielectric; GaAs MOSFET

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; HYSTERESIS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE;

GATE DIELECTRIC LAYERS;

MOSFET DEVICES;

EID: 0036439994     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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