Optical and electrical properties of amorphous Gd XGa 0.4-XO 0.6 films in Gd xGa 0.4-x O 0.6/Ga 2O 3 gate dielectric stacks on GaAs

Applied Physics Letters

Volumn 84, Issue 14, 2004, Pages 2521-2523

  Passlack, M ^a   Medendorp, N ^a,c   Zollner, S ^a   Gregory, R ^a   Braddock, D ^b  

^a MOTOROLA INC   (United States)

^b Osemi Incorporated   (United States)

^c JDS UNIPHASE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC STACKS; MOLE PERCENT; MOLECULAR-BEAM DEPOSITION; OPTICAL BAND GAP;

CAPACITANCE; DEPOSITION; DIELECTRIC DEVICES; ELECTRIC POTENTIAL; FERMI LEVEL; FIBER OPTICS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOLECULAR BEAMS; MOSFET DEVICES; OPTICAL COMMUNICATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

GADOLINIUM COMPOUNDS;

EID: 2342612801     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695445     Document Type: Article

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