Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

Applied Physics Letters

Volumn 80, Issue 2, 2002, Pages 201-203

  Hersam, M C ^a   Guisinger, N P ^b   Lee, J ^b   Cheng, K ^b   Lyding, J W ^b  

^a Northwestern University   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; ELECTRON STIMULATED DESORPTION; GAS PHASE MIXTURES; PASSIVATION PROCESS; RECONSTRUCTED SURFACES; SCANNING TUNNELING MICROSCOPY (STM); SI(1 0 0); SI(100) SURFACE; SILICON SURFACES; SURFACE CONCENTRATION; VARIABLE TEMPERATURE;

BEHAVIORAL RESEARCH; DANGLING BONDS; DESORPTION; GASES; MONOLAYERS; PASSIVATION; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; STATISTICAL MECHANICS; THERMODYNAMICS;

SILICON;

EID: 79956057370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1431689     Document Type: Article

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