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Volumn 80, Issue 2, 2002, Pages 213-215

Radiation sensitivity reduction in deuterium annealed Si-SiO2 structures

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL BIAS; FORMING GAS; POSITIVE CHARGES; POSITIVE FIXED OXIDE CHARGES; RADIATION SENSITIVITY; RADIATION-INDUCED; X RAY RADIATION;

DEUTERIUM; HYDROGEN; SILICON; SILICON COMPOUNDS;

ANNEALING;

EID: 79956024568 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1428415 Document Type: Article

Times cited : (3)

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