Nitrogen profile engineering in the interfacial SiON in a HfAlO/SiON gate dielectric by NO re-oxidation

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 323-328

  Torii, Kazuyoshi ^a   Mitsuhashi, Riichiro ^b   Ohji, Hiroshi ^c   Kawahara, Takaaki ^d   Kitajima, Hiroshi ^d  

^a HITACHI LTD   (Japan)

^b IMEC   (Belgium)

^c ROHM CO LTD   (Japan)

^d RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Gate dielectrics; High ; Interfacial layer; Mobility; Reoxidation

Indexed keywords

DIELECTRIC DEVICES; NITROGEN; OXIDATION; SILICON NITRIDE; SUBSTRATES; THRESHOLD VOLTAGE;

GATE DIELECTRICS; INTERFACIAL LAYER; REOXIDATION;

MOSFET DEVICES;

EID: 31744440686     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.863139     Document Type: Article

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