Dielectric breakdown characteristics of poly-Si/HfAlOx/SiON gate stack

Materials Research Society Symposium Proceedings

Volumn 811, Issue , 2004, Pages 37-41

  Torii, Kazuyoshi ^a   Ohji, Hiroshi ^a   Mutoh, Akiyoshi ^a   Kawhara, Takaaki ^a   Mitsuhashi, Riichiro ^a   Horiuchi, Atsushi ^a   Miyazaki, S ^b   Kitajima, Hiroshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITORS; CMOS INTEGRATED CIRCUITS; DEPOSITION; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; THERMAL EFFECTS; WEIBULL DISTRIBUTION;

DIELECTRIC BREAKDOWN; GATE LEAKAGE CURRENTS; GATE STACKS; MEAN TIME TO FAILURE (MTTF);

MOSFET DEVICES;

EID: 12744252944     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-811-d2.7     Document Type: Conference Paper

References (5)

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