Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks

Extended Abstracts of International Workshop on Gate Insulator, IWGI 2003

Volumn , Issue , 2003, Pages 150-154

  Mitsuhashi, R ^a   Horiuchi, A ^a   Uedono, A ^b   Torii, K ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Capacitors; CMOS process; High K dielectric materials; High K gate dielectrics; Lead compounds; Leakage current; Oxidation; Rapid thermal annealing; Temperature; Thermal stability

Indexed keywords

ANNEALING; CAPACITORS; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; LEAD COMPOUNDS; LEAKAGE CURRENTS; OXIDATION; RAPID THERMAL ANNEALING; TEMPERATURE; THERMODYNAMIC STABILITY;

CMOS PROCESSS; GATE STACKS; HIGH- K; HIGH- K GATE DIELECTRICS; HIGH-K DIELECTRIC MATERIALS; HIGH-TEMPERATURE ANNEALING; INTERFACIAL LAYER;

GATE DIELECTRICS;

EID: 31744431826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWGI.2003.159203     Document Type: Conference Paper

References (5)

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