Thermal instability of poly-Si Gate Al2O3 MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1860-1863

  Kim, Woo Sik ^a   Kawahara, Takaaki ^a   Itoh, Hiroyuki ^a   Horiuchi, Atsushi ^a   Muto, Akiyoshi ^a   Maeda, Takeshi ^a   Mitsuhashi, Riichirou ^a   Torii, Kazuyoshi ^a   Kitajima, Hiroshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Interface reaction; Sio2 Al2o3; Thermal stability

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HIGH TEMPERATURE EFFECTS; POLYSILICON; RELIABILITY; SEMICONDUCTING ALUMINUM COMPOUNDS; THERMODYNAMIC STABILITY;

INTERFACE REACTION; INTERFACIAL LAYERS; SIO2/AL2O3; THERMAL INSTABILITY;

MOSFET DEVICES;

EID: 3142637103     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1860     Document Type: Conference Paper

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