Impact of rapid thermal O2 anneal on dielectric stack structures of hafnium aluminate and silicon dioxide formed on Si(100)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7831-7836

  Ohta, Akio ^a   Nakagawa, Hiroshi ^a   Murakami, Hideki ^a   Higashi, Seiichirou ^a   Kawahara, Takayuki ^b   Torii, Kazuyoshi ^b   Miyazaki, Seiichi ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Diffusion; Energy band aliment; Hafnium aluminate; High k gate dielectrics; Photoemission; Total photoelectron yield spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; FIELD EFFECT TRANSISTORS; GROWTH (MATERIALS); OXIDATION; OXYGEN; PHOTOEMISSION; RAPID THERMAL ANNEALING; SILICA; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ENERGY BAND ALIMENT; HAFNIUM ALUMINATE; HIGH-K DIELECTRICS; TOTAL PHOTOELECTRON YIELD SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 12844276530     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7831     Document Type: Conference Paper

References (8)

1. M. L. Green, E. P. Gusev, R. Degraeve and E. L. Garfunkel: J. Appl. Phys. 90 (2001) 2057.
2. T. Nabatame, K. Iwamoto, H. Ota, K. Tominaga, H. Hisamatsu, T. Yasuda, K. Yamamoto, W. Mizubayashi, Y. Morita, N. Yasuda, M. Ohno, T. Horikawa and A. Toriumi: Dig. Tech. Pap. Symp. VLSI Technol., 2003, Kyoto, p. 25.
3. A. Muto et al.: Ext. Abstr. Int. Workshop Gate Insulator, Tokyo, 2003, p. 64.
4. R. Mitsuhashi et al.: Ext. Abstr. Int. Workshop Gate Insulator, Tokyo, 2003. p. 150.
5. S. Miyazaki, N. Narasaki, M. Ogasawara and M. Hirose: Microelecron. Eng. 59 (2001) 373.
6. M. Yamaoka, M. Narasaki, H. Murakami and S. Miyazaki: Proc. 2nd Electrochem. Soc. Int. Semicond. Technol. Conf., Tokyo, 2002, p. 229.
7. S. Miyazaki: J. Vac. Sci. & Technol. B 19 (2001) 2212.
8. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose: Microelectron. Eng. 48 (1999) 63.