Incubation time during the CVD of Si onto SiO2 from silane

Chemical Vapor Deposition

Volumn 10, Issue 3, 2004, Pages 128-133

  Kajikawa, Yuya ^a   Tsuchiya, Toshihiro ^a   Noda, Suguru ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DESORPTION; DIFFUSION; IMAGE ANALYSIS; NUCLEATION; PARTIAL PRESSURE; PROBABILITY DISTRIBUTIONS; SCANNING ELECTRON MICROSCOPY; SILANES; SILICA; SUBSTRATES; SURFACE CHEMISTRY; SURFACE PHENOMENA; THERMAL EFFECTS; THICKNESS MEASUREMENT;

INCUBATION TIME; NUCLEI DENSITIES; SCANNING REFLECTION ELECTRON MICROSCOPY (SREM); SELECTIVE DEPOSITION; SURFACE DIFFUSION; TEMPERATURE PROGRAMMED DESORPTION (TPD);

SILICON;

EID: 3142746938     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200304165     Document Type: Article

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