Influence of the chemical properties of the substrate on silicon quantum dot nucleation

Journal of the Electrochemical Society

Volumn 150, Issue 3, 2003, Pages

  Mazen, F ^a   Baron, T ^b   Bremond G ^a   Buffet, N ^c   Rochat, N ^c   Mur, P ^c   Semeria M N ^c  

^a UNIVERSITÉ DE LYON   (France)

^b CNRS   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MORPHOLOGY; NUCLEATION; OXIDATION; ROUGHNESS MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SILICA; SUBSTRATES;

CHEMICAL PROPERTIES; LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; MULTIPLE INTERNAL REFLECTION FOURIER TRANSFORM INFRARED SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037348957     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1543570     Document Type: Article

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