Si quantum dot formation with low-pressure chemical vapor deposition

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 2 B, 1996, Pages

  Nakajima, Anri ^a   Sugita, Yoshihiro ^a   Kawamura, Kazuo ^a   Tomita, Hirofumi ^a   Yokoyama, Naoki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BROWNIAN MOVEMENT; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; LIGHT ABSORPTION; NANOSTRUCTURED MATERIALS; OPTICAL VARIABLES MEASUREMENT; QUANTUM THEORY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

BROWNIAN MIGRATION; ENERGY DISPERSIVE XRAY SPECTROMETER; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; NANOCRYSTAL SPECTRUM; OPTICAL ABSORPTION MEASUREMENT; QUANTUM SIZE EFFECTS; SILICON QUANTUM DOT FORMATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030082616     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.L189     Document Type: Article

References (15)