Chemical vapor deposition of Si on chlorosilane-treated SiO2 surfaces. I. Suppression and enhancement of Si nucleation

Journal of Applied Physics

Volumn 90, Issue 8, 2001, Pages 3879-3886

  Yasuda, T ^a   Nishizawa, M ^a   Yamasaki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035886147     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1402977     Document Type: Article

References (24)

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