Low-temperature selective epitaxy of silicon with chlorinated chemistry by RTCVD

Materials Science and Engineering: B

Volumn 89, Issue 1-3, 2002, Pages 306-309

  Ribot, P ^a   Dutartre, D ^a  

^a STMICROELECTRONICS   (France)

Author keywords

CMOS; RTCVD; Selective epitaxy; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; LOW TEMPERATURE EFFECTS; PARTIAL PRESSURE; SEMICONDUCTOR DEVICE MANUFACTURE; SILANES; SUBSTRATES;

RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); SELECTIVE EPITAXY;

SILICON WAFERS;

EID: 0037074809     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00804-2     Document Type: Conference Paper

References (5)