Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition

Thin Solid Films

Volumn 411, Issue 2, 2002, Pages 177-184

  Tsai, Dah Shyang ^a   Chang, Tzu Chien ^a   Hsin, Wei Cheng ^a   Hamamura, H ^b   Shimogaki, Y ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Chemical vapor deposition; Growth mechanism; Reaction kinetics; Silane

Indexed keywords

FILM GROWTH; GAS ADSORPTION; HYDROGENATION; PROBABILITY; REACTION KINETICS; SILANES;

GAS PHASE SPECIES; GROWTH MECHANISM; REACTIVE STICKING COEFFICIENTS (RSC); STICKING COEFFICIENTS;

CHEMICAL VAPOR DEPOSITION;

EID: 3142781168     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00237-7     Document Type: Article

References (18)

1. R.B. Fair, in: C.Y. Chang, S.M. Sze (Eds.), Conventional and Rapid Thermal Processes, ULSI Technology, McGraw-Hill, New York, 1996, p. 169.
2. J.T. Fitch, R.I. Hegde, I. Beinglass, M. Venkatesan, in: B.G. Demczyk (Ed.), Proceedings of Evolution of Thin Film and Surface Structure and Morphology, 28 November-1 December, Materials Research Society, Boston, MA, 1994, p. 1994, p. 89.
3. R.J. Buss, P. Ho, W.G. Breiland, M.E. Coltrin, J. Appl. Phys. 63 (1988) 2808.
4. J. Perrin, T. Broekhuizen, Appl. Phys. Lett. 50 (1987) 433.
5. P. Ho, W.G. Breiland, R.J. Buss, J. Chem. Phys. 91 (1989) 2627.
6. R.M. Robertson, M.J. Rossi, J. Chem. Phys. 91 (1989) 5037.
7. S. Ramalingam, D. Maroudas, E.S. Aydil, J. Appl. Phys. 84 (1998) 3895.
8. S. Ramalingam, D. Maroudas, E.S. Aydil, J. Appl. Phys. 86 (1999) 2872.
9. M.E. Coltrin, R.J. Kee, J.A. Miller, J. Electrochem. Soc. 133 (1986) 1206.
10. M.E. Coltrin, R.J. Kee, G.H. Evans, J. Electrochem. Soc. 136 (1989) 819.
11. P. Ho, M.E. Coltrin, W.G. Breiland, J. Phys. Chem. 98 (1994) 10138.
12. J.M. Jasinski, S.M. Gates, Ace. Chem. Res. 24 (1991) 9.
13. CRESLAF Simulation Software, CHEMKIN Collection Release 3.5, Reaction Design, July 1999.
14. D.W. Greve, M. Racanelli, J. Electrochem. Soc. 138 (1991) 1744.
15. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, K.C. Janda, J. Chem. Phys. 92 (1990) 5700.
16. K. Sinniah, M.G. Sherman, L.B. Lewis, W.H. Weinberg, J.T. Yates, K.C. Jand, a, Phys. Rev. Lett. 62 (1989) 567.
17. Y. Shimogaki, T. Uchida, T. Saito, Y. Egashira, K. Sugawara, H. Komiyama, in: T.S. Cale, ES. Pintchovski (Eds.), Proceedings of Advanced Metallization for ULSI Applications, Materials Research Society, Pittsburgh, PA, 1993, p. 225.
18. L.C. Hong, C.C. Hsu, D.S. Tsai, Mater. Chem. Phys. 48 (1997) 82.