Influence of carrier and doping gases on the chemical vapor deposition of silicon quantum dots

Materials Science and Engineering: B

Volumn 101, Issue 1-3, 2003, Pages 164-168

  Mazen, F ^a   Baron, T ^b   Bremond G ^a   Hartmann, J M ^c   Semeria M N ^c  

^a UNIVERSITÉ DE LYON   (France)

^b Laboratoire Interdisciplinaire de Physique   (France)

^c CEA LETI   (France)

Author keywords

CVD; Doping; Quantum dots; Si

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILANES; SURFACE CHEMISTRY;

DOPING GASES; SILICON QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 1642317733     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00701-8     Document Type: Conference Paper

References (12)

1. Tilke A.T., Simmel F.C., Blick R.H., Lorenz H., Kotthaus J.P. Prog. Quant. Electron. 25:2001;97.
2. Tiwari S., Rhana F., Hanafi H., Harstein A., Crabbé E.F., Chan K. Appl. Phys. Lett. 68:1996;1377.
3. Baron T., Martin F., Mur P., Wyon C., Dupuy M. J. Cryst. Growth. 209:2000;1004.
4. Baron T., Gentile P., Magnea N., Mur P. Appl. Phys. Lett. 79:2001;1175.
5. Baron T., Mazen F., Busseret C., Souifi A., Mur P., Séméria M.N., Moriceau H., Aspard B., Gentile P., Magnea N. Micr. Eng. 61-62:2002;511.
6. F. Mazen, T. Baron, N. Buffet, N. Rochat, P. Mur, G. Brémond, M.N. Séméria, J. Electrochem. Soc. (2003) in press.
7. Bertin F., Baron T., Mariolle D., Martin F., Chabli A., Dupuy M. Phys. Stat. Sol. 175:1999;405.
8. Nakagawa K., Fukuda M., Miyazaki S., Hirose M. Mater. Res. Soc. Symp. Proc. 452:1997;243.
9. Madhukar S., Smith K., Muralidhar R., O'Meara D., Sadd M., Nguyen B.Y., White B., Jones B. Mater. Res. Soc. Symp. Proc. 638:2001;F5.2.1.
10. Vansant E.F., Van Der Voort P., Vrancken K.C. Characterization and Chemical Modification of the Silica Surface. 1991;Elsevier, Amsterdam.
11. Hitchmann M.L., Jensen K.F. Chemical Vapor Deposition. 1993;Academic Press, San Diego.
12. Eversteyn F.C., Put B.H. J. Electrochem. Soc. 120:1973;106.