A quantum correction poisson equation for metal-oxide-semiconductor structure simulation

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 917-922

  Li, Yiming ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; MATHEMATICAL MODELS; MOSFET DEVICES; POISSON EQUATION; QUANTUM THEORY; SILICA; SILICON;

BOLTZMANN TRANSPORT EQUATIONS; METAL-OXIDE-SEMICONDUCTOR (MOS) STRUCTURES; QUANTUM CONFINEMENT EFFECTS; QUANTUM CORRECTIONS;

MOS DEVICES;

EID: 3142669059     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/024     Document Type: Article

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