A Quantum Correction Model for Nanoscale Double-Gate MOS Devices Under Inversion Conditions

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 491-495

  Li, Yiming ^a,b   Tang, Ting Wei ^c   Yu, Shao Ming ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c University of Massachusetts   (United States)

Author keywords

double gate MOS structure; inversion condition; quantum correction

Indexed keywords

ELECTRIC CHARGE; MOS DEVICES; NANOTECHNOLOGY;

CHARGE CONCENTRATION; DEVICE SIMULATORS; DOUBLE-GATE MOS STRUCTURES; DOUBLE-GATE MOSFETS; INVERSION CHARGE; INVERSION CONDITIONS; QUANTUM CORRECTION; QUANTUM CORRECTION MODELS;

MOSFET DEVICES;

EID: 3142771332     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011477.27016.6a     Document Type: Article

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