Current and capacitance characteristics of a metal-insulator-semiconductor structure with an ultrathin oxide layer

Superlattices and Microstructures

Volumn 30, Issue 2, 2001, Pages 53-60

  Fu, Y ^a   Willander, M ^a   Lundgren, P ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Current capacitance; Metal insulator semiconductor; Ultrathin oxide layer

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CURRENT DENSITY; OXIDES; POISSON EQUATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SUBSTRATES; ULTRATHIN FILMS; WAVE EQUATIONS;

ULTRATHIN OXIDE LAYERS;

MIS DEVICES;

EID: 0035414952     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.0989     Document Type: Article

References (12)

1. Self-consistent modeling of accumulation layers and tunneling current through very thin oxides
2. Influence of impurity and phonon scattering effects in resonant tunneling structures
3. 2
4. Capacitance analysis of AlGaAs/GaAs and InAlAs/InGaAs heterostructure barrier varactors
5. Impact of gate material on the interface state density of metal-oxide-silicon devices with an ultrathin oxide layer
6. Carrier conduction through the quantum barrier region in a heterostructure barrier varactor induced by an AC bias