New charge model including quantum mechanical effects in MOS structure inversion layer

Solid-State Electronics

Volumn 44, Issue 9, 2000, Pages 1697-1702

  Ma, Yutao ^a   Liu, Litian ^a   Deng, Wei ^a   Tian, Lilin ^a   Li, Zhijian ^a   Yu, Zhiping ^b  

^a TSINGHUA UNIVERSITY   (China)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PARTIAL DIFFERENTIAL EQUATIONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

CHARGE CONTROL MODEL;

MOSFET DEVICES;

EID: 0034272837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00090-3     Document Type: Article

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13. Ma Y, Liu L, Yu Z, Li Z. On the degeneracy of quantized inversion layer in MOS structures with ultra-thin gate oxide and high substrate doping levels, submitted for publication.