Quantum effects in nanometer MOS structures

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 546-549

  Chirico, F ^a   Sala, F Della ^a   Carlo, A Di ^a   Lugli, P ^a  

^a INFM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; COMPUTATIONAL METHODS; ELECTRON TRAPS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PARTIAL DIFFERENTIAL EQUATIONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE STRUCTURES;

POISSON EQUATIONS; SCHRODINGER EQUATIONS;

MOS DEVICES;

EID: 0033313284     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00337-3     Document Type: Article

References (6)

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5. Spinelli A.S., Benvenuti A., Pacelli A. IEEE Trans. Electron Dev. 6:1998;1342.
6. Wang L.W., Franceschetti A., Zunger A. Phys. Rev. Lett. 45:1997;2819.