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Volumn 314, Issue 1-4, 2002, Pages 350-353

Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and three-dimensional Monte Carlo

Author keywords

Effective potential; Monte Carlo; SOI MOSFET

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; GROUND STATE; KINETIC ENERGY; MATHEMATICAL MODELS; MONTE CARLO METHODS; SILICON ON INSULATOR TECHNOLOGY;

EID: 0036503414     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)01385-0     Document Type: Conference Paper
Times cited : (35)

References (3)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.