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Volumn 314, Issue 1-4, 2002, Pages 350-353
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Modeling of quantum effects in ultrasmall FD-SOI MOSFETs with effective potentials and three-dimensional Monte Carlo
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Author keywords
Effective potential; Monte Carlo; SOI MOSFET
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Indexed keywords
APPROXIMATION THEORY;
COMPUTER SIMULATION;
ELECTRIC POTENTIAL;
GROUND STATE;
KINETIC ENERGY;
MATHEMATICAL MODELS;
MONTE CARLO METHODS;
SILICON ON INSULATOR TECHNOLOGY;
CARRIER ENERGY;
MOSFET DEVICES;
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EID: 0036503414
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-4526(01)01385-0 Document Type: Conference Paper |
Times cited : (35)
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References (3)
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