Comparison of strain field in cleaved XSTM specimen with un-cleaved InAs/GaAs quantum dot nanostructure

Surface Science

Volumn 562, Issue 1-3, 2004, Pages 73-82

  Shin, Hyunho ^a   Hong, Kug Sun ^a   Lee, Woong ^b   Yoo, Yo Han ^c  

^a Seoul National University   (South Korea)

^b Yonsei University   (South Korea)

^c Agy for Def Development   (South Korea)

Author keywords

Gallium arsenide; Indium arsenide; Quantum effects; Scanning tunneling microscopy; Surface stress; Surface structure, morphology, roughness, and topography

Indexed keywords

MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; SURFACE ROUGHNESS; SURFACE STRUCTURE;

QUANTUM EFFECTS; STRAIN FIELDS; SURFACE STRESSES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 3142527010     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.05.130     Document Type: Article

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