Comparison of strain fields in truncated and un-truncated quantum dots in stacked InAs/GaAs nanostructures with varying stacking periods

Journal of Physics Condensed Matter

Volumn 15, Issue 22, 2003, Pages 3689-3699

  Shin, Hyunho ^a   Lee, Woong ^a   Yoo, Yo Han ^a  

^a Agency for Defence Development   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STACKING FAULTS; STRAIN;

COMPRESSIVE RADIAL STRAIN; HYDROSTATIC STRAIN; STRAIN FIELDS; TENSILE AXIAL STRAIN; TENSILE BIAXIAL STRAIN;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037931837     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/22/304     Document Type: Article

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