Strain relaxation at cleaved surfaces studied by atomic force microscopy

Applied Physics A: Materials Science and Processing

Volumn 69, Issue 3, 1999, Pages 347-351

  Lelarge, F ^a   Dehaese, O ^a   Kapon, E ^a   Priester, C ^b  

^a EPFL   (Switzerland)

^b INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); FINITE ELEMENT METHOD; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; STRESS RELAXATION; SURFACE MEASUREMENT;

SURFACE UNDULATION;

HETEROJUNCTIONS;

EID: 0032625133     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390051012     Document Type: Article

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