Cross-sectional STM study of InAs quantum dots for laser devices

Surface and Interface Analysis

Volumn 27, Issue 5, 1999, Pages 537-541

  Eisele, H ^a   Flebbe, O ^a   Kalka, T ^a   Dahne Prietsch M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SURFACE TOPOGRAPHY;

CROSS SECTIONAL; INDIUM ARSENIDE; STRAIN RELAXATION; ULTRAHIGH VACUUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032671071     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(199905/06)27:5/6<537::AID-SIA522>3.0.CO;2-R     Document Type: Article

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