Determination of the outward relaxation of cleaved strained InAs structures by scanning tunneling microscopy

Applied Surface Science

Volumn 190, Issue 1-4, 2002, Pages 258-263

  Bruls, D M ^a   Koenraad, P M ^a   Hopkinson, M ^a   Wolter, J H ^a   Salemink, H W M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Electronic contrast; Quantum dot; Quantum well; Relaxation; STM; Strain

Indexed keywords

COMPOSITION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; STRESS RELAXATION;

SEMICONDUCTING SURFACES;

SURFACE STRUCTURE;

EID: 0037042073     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00861-3     Document Type: Article

References (11)