Effect of wire width on strain distribution and bandgap in laterally aligned InGaAs/GaAs quantum wire nanostructures

Semiconductor Science and Technology

Volumn 19, Issue 1, 2004, Pages 93-99

  Yoo, Yo Han ^a   Lee, Woong ^b   Shin, Hyunho ^a  

^a Agency for Defence Development   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; ELECTRIC CONDUCTIVITY; ENERGY GAP; FINITE ELEMENT METHOD; GEOMETRY; INTERPOLATION; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POISSON RATIO; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

QUANTUM CONFINEMENT; SPIN-ORBIT SPLITTING; STRAIN-MODIFIED CONDUCTION;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0346497612     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/1/016     Document Type: Article

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