Composition profiling at the atomic scale in III-V nanostructures by cross-sectional STM

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 526-532

  Koenraad, P M ^a   Bruls, D M ^a   Davies, J H ^b   Gill, S P A ^c   Long, Fei ^c   Hopkinson, M ^d   Skolnick, M ^d   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF LEICESTER   (United Kingdom)

^d UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Composition profiling; III V nanostructures; X STM

Indexed keywords

CRYSTAL LATTICES; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

COMPOSITION PROFILING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037391480     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00860-3     Document Type: Conference Paper

References (5)

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3. M. Buda, M.R. Leys, A.Yu. Silov, H. Vonk, J.H. Wolter, C.T. Foxon, Proceedings of the International Workshop on Nitride Semiconductors IPAP Conference Series, Vol. 1, Nagoya, Japan, 2000, p. 433.
4. Bruls D.M., Vugs J.W.A.M., Koenraad P.M., Hopkinson M., Skolnick M.S., Long Fei, Gill S.P.A., Wolter J.H. Appl. Phys. Lett. 81:2002;1708.
5. Fry P.W.et al. Phys. Rev. Lett. 84:2000;733.